Samsung
K4B2G1646Q-BCK0
DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
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Technical Specifications
Samsung K4B2G1646Q-BCK0 technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 96 |
| Min Operating Temperature | 0 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B96 |
| Width | 7.5 |
| Length | 13.3 |
| Pin Count | 96 |
| Number of Functions | 1 |
| Temperature Grade | OTHER |
| Supply Voltage-Nom (Vsup) | 1.5 |
| Supply Voltage-Max (Vsup) | 1.575 |
| Supply Voltage-Min (Vsup) | 1.425 |
| Supply Current-Max | 0.219 |
| Number of Words | 134217728 |
| Number of Words Code | 128000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.011 |
| Access Time-Max | 0.225 |
| Clock Frequency-Max (fCLK) | 800 |
| I/O Type | COMMON |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8542.32.00.36 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Samsung K4B2G1646Q-BCK0 Datasheet
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