This 96-pin BGA DDR DRAM IC from Samsung operates within an industrial temperature range of -40°C to 85°C. It has a maximum supply voltage of 1.5V and a maximum supply current of 0.219A. The IC features a maximum clock frequency of 800MHz and a maximum access time of 0.225ns. It also has a maximum standby current of 0.011A and can store 134,217,728 words of data.
Quick Jump:
Technical Specifications
Samsung K4B2G1646Q-BIK0 technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 96 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B96 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 1.5 |
| Supply Current-Max | 0.219 |
| Number of Words | 134217728 |
| Number of Words Code | 128000000 |
| Memory IC Type | DDR DRAM |
| Standby Current-Max | 0.011 |
| Access Time-Max | 0.225 |
| Clock Frequency-Max (fCLK) | 800 |
| I/O Type | COMMON |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Samsung K4B2G1646Q-BIK0 Datasheet
Download the complete datasheet for Samsung K4B2G1646Q-BIK0 to view detailed technical specifications.
No datasheet is available for this part.