The K4H510438M-TCB0 is a 66-pin DDR DRAM IC from Samsung, operating within a temperature range of 0 to 70°C. It has a nominal supply voltage of 2.5V, with a maximum and minimum supply voltage of 2.7V and 2.3V, respectively. The device has a maximum standby current of 0.006A and an access time of 0.75ns. It operates at a maximum clock frequency of 133MHz and features a common I/O type. The IC is available in TSOP2 and TSSOP66 packages.
Samsung K4H510438M-TCB0 technical specifications.
| Max Operating Temperature | 70 |
| Number of Terminals | 66 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G66 |
| Width | 10.16 |
| Length | 22.22 |
| Pin Count | 66 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 2.5 |
| Supply Voltage-Max (Vsup) | 2.7 |
| Supply Voltage-Min (Vsup) | 2.3 |
| Number of Words | 134217728 |
| Number of Words Code | 128000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.006 |
| Access Time-Max | 0.75 |
| Clock Frequency-Max (fCLK) | 133 |
| I/O Type | COMMON |
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8542.32.00.28 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
