This 66-pin DDR DRAM IC from Samsung operates within a commercial temperature range of 0 to 70 degrees Celsius. It has a maximum supply voltage of 2.7V and a minimum supply voltage of 2.3V. The device can handle a maximum supply current of 0.25A and has a maximum standby current of 0.003A. The access time is maximally 0.75ns, and the clock frequency is maximally 133MHz. The IC is packaged in a TSOP2 or TSSOP66 package type.
Checking distributor stock and pricing after the page loads.
| Max Operating Temperature | 70 |
| Number of Terminals | 66 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G66 |
| Width | 10.16 |
| Length | 22.22 |
| Pin Count | 66 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 2.5 |
| Supply Voltage-Max (Vsup) | 2.7 |
| Supply Voltage-Min (Vsup) | 2.3 |
| Supply Current-Max | 0.25 |
| Number of Words | 33554432 |
| Number of Words Code | 32000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.003 |
| Access Time-Max | 0.75 |
| Clock Frequency-Max (fCLK) | 133 |
| I/O Type | COMMON |
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8542.32.00.24 |
| REACH | Compliant |
| Military Spec | False |
