This 66-pin TSSOP DDR DRAM from Samsung operates within a commercial temperature range of 0 to 70 degrees Celsius. It has a maximum supply voltage of 2.5V and a maximum supply current of 0.25A. The device features a maximum access time of 0.75ns and a maximum clock frequency of 133MHz. It also has a maximum standby current of 0.003A and can store up to 33554432 words of data.
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| Max Operating Temperature | 70 |
| Number of Terminals | 66 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G66 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 2.5 |
| Supply Current-Max | 0.25 |
| Number of Words | 33554432 |
| Number of Words Code | 32000000 |
| Memory IC Type | DDR DRAM |
| Standby Current-Max | 0.003 |
| Access Time-Max | 0.75 |
| Clock Frequency-Max (fCLK) | 133 |
| I/O Type | COMMON |
| RoHS | No |
| Lead Free | No |
| REACH | Compliant |
| Military Spec | False |
