DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Samsung K4H561638D-TCCC technical specifications.
| Max Operating Temperature | 70 |
| Number of Terminals | 66 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G66 |
| Width | 10.16 |
| Length | 22.22 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 2.6 |
| Supply Voltage-Max (Vsup) | 2.7 |
| Supply Voltage-Min (Vsup) | 2.5 |
| Number of Words | 16777216 |
| Number of Words Code | 16000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Access Time-Max | 0.65 |
| Clock Frequency-Max (fCLK) | 200 |
| I/O Type | COMMON |
| RoHS | No |
| Lead Free | No |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
