The K4S280432D-TP75 is a 54-pin TSOP2 synchronous DRAM from Samsung. It operates within an industrial temperature range of -40 to 85 degrees Celsius. The device has a maximum supply voltage of 3.6V and a minimum supply voltage of 3V. The access time is maximally 5.4 nanoseconds. This synchronous DRAM is designed for use in a variety of applications.
Samsung K4S280432D-TP75 technical specifications.
| Max Operating Temperature | 85 |
| Number of Terminals | 54 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G54 |
| Width | 10.16 |
| Length | 22.22 |
| Pin Count | 54 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Supply Voltage-Max (Vsup) | 3.6 |
| Supply Voltage-Min (Vsup) | 3 |
| Number of Words | 33554432 |
| Number of Words Code | 32000000 |
| Memory IC Type | SYNCHRONOUS DRAM |
| Number of Ports | 1 |
| Access Time-Max | 5.4 |
| Eccn Code | EAR99 |
| HTS Code | 8542.32.00.02 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Samsung K4S280432D-TP75 to view detailed technical specifications.
No datasheet is available for this part.