The K4S510432B-TL75 is a commercial-grade synchronous DRAM IC from Samsung, featuring 134,217,728 words of memory and 128,000,000 words of code storage. It operates at a maximum clock frequency of 133 MHz and has a maximum access time of 5.4 ns. The device is designed for use in applications where a high-speed memory solution is required, and it can handle a maximum supply current of 0.2 A. The IC is packaged in a TSOP-54 package and is suitable for use in commercial temperature environments ranging from 0 to 70 degrees Celsius.
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Technical Specifications
Samsung K4S510432B-TL75 technical specifications.
General
| Max Operating Temperature | 70 |
| Number of Terminals | 54 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G54 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Supply Current-Max | 0.2 |
| Number of Words | 134217728 |
| Number of Words Code | 128000000 |
| Memory IC Type | SYNCHRONOUS DRAM |
| Standby Current-Max | 0.002 |
| Access Time-Max | 5.4 |
| Clock Frequency-Max (fCLK) | 133 |
| I/O Type | COMMON |
Compliance
| RoHS | No |
| Lead Free | No |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Samsung K4S510432B-TL75 Datasheet
Download the complete datasheet for Samsung K4S510432B-TL75 to view detailed technical specifications.
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