Samsung
K4S641632K-TC75
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Technical Specifications
Samsung K4S641632K-TC75 technical specifications.
General
| Max Operating Temperature | 70 |
| Number of Terminals | 54 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G54 |
| Width | 10.16 |
| Length | 22.22 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Supply Voltage-Max (Vsup) | 3.6 |
| Supply Voltage-Min (Vsup) | 3 |
| Supply Current-Max | 0.085 |
| Number of Words | 4194304 |
| Number of Words Code | 4000000 |
| Memory IC Type | SYNCHRONOUS DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.001 |
| Access Time-Max | 5.4 |
| Clock Frequency-Max (fCLK) | 133 |
| I/O Type | COMMON |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Samsung K4S641632K-TC75 Datasheet
Download the complete datasheet for Samsung K4S641632K-TC75 to view detailed technical specifications.
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