This 1.8V DDR DRAM IC features a maximum operating temperature of 95 degrees Celsius and a minimum operating temperature of 0 degrees Celsius. It has 60 terminals positioned on the bottom and is packaged in a BGA60 package. The device has a maximum supply current of 0.175A and a maximum standby current of 0.008A. It supports a maximum clock frequency of 333MHz and has a maximum access time of 0.45ns. The IC is designed for use in memory applications.
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Technical Specifications
Samsung K4T51083QG-HCE6 technical specifications.
General
| Max Operating Temperature | 95 |
| Number of Terminals | 60 |
| Min Operating Temperature | 0 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B60 |
| Temperature Grade | OTHER |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Current-Max | 0.175 |
| Number of Words | 67108864 |
| Number of Words Code | 64000000 |
| Memory IC Type | DDR DRAM |
| Standby Current-Max | 0.008 |
| Access Time-Max | 0.45 |
| Clock Frequency-Max (fCLK) | 333 |
| I/O Type | COMMON |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Samsung K4T51083QG-HCE6 Datasheet
Download the complete datasheet for Samsung K4T51083QG-HCE6 to view detailed technical specifications.
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