
Synchronous SRAM chip with 8M-bit density, organized as 512K words by 18 bits. Features a 6.5 ns maximum access time and operates at a maximum clock rate of 133.33 MHz with SDR data rate architecture. This dual-port memory component utilizes a 19-bit address bus and is housed in a 100-pin TQFP (Thin Quad Flat Package) with a 0.65 mm pin pitch, suitable for surface mounting. It operates from a 3.3 V supply voltage, with a minimum of 3.135 V and a maximum of 3.465 V, and functions within a temperature range of 0 °C to 70 °C.
Samsung K7M801825B-QC265 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | QFP |
| Package/Case | TQFP |
| Package Description | Thin Quad Flat Package |
| Lead Shape | Gull-wing |
| Pin Count | 100 |
| PCB | 100 |
| Package Length (mm) | 20 |
| Package Width (mm) | 14 |
| Package Height (mm) | 1.4 |
| Seated Plane Height (mm) | 1.6(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-026BHA |
| Density | 8Mbit |
| Address Bus Width | 19bit |
| Maximum Access Time | 6.5ns |
| Timing Type | Synchronous |
| Maximum Clock Rate | 133.33MHz |
| Data Rate Architecture | SDR |
| Density in Bits | 8388608bit |
| Maximum Operating Current | 300mA |
| Typical Operating Supply Voltage | 3.3V |
| Number of Bits per Word | 18bit |
| Number of Ports | 2 |
| Number of Words | 512K |
| Min Operating Supply Voltage | 3.135V |
| Max Operating Supply Voltage | 3.465V |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
| Architecture | Flow-Through |
| Cage Code | 1542F |
| EU RoHS | No |
| HTS Code | 8542320041 |
| Schedule B | 8542320040 |
| ECCN | 3A991.b.2.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Samsung K7M801825B-QC265 to view detailed technical specifications.
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