Samsung
KM416S1120DT-G10
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
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Technical Specifications
Samsung KM416S1120DT-G10 technical specifications.
General
| Max Operating Temperature | 70 |
| Number of Terminals | 50 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G50 |
| Width | 10.16 |
| Length | 20.95 |
| Pin Count | 50 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Supply Voltage-Max (Vsup) | 3.6 |
| Supply Voltage-Min (Vsup) | 3 |
| Supply Current-Max | 0.115 |
| Number of Words | 1048576 |
| Number of Words Code | 1000000 |
| Memory IC Type | SYNCHRONOUS DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.002 |
| Access Time-Max | 6 |
| Clock Frequency-Max (fCLK) | 100 |
| I/O Type | COMMON |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8542.32.00.02 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Samsung KM416S1120DT-G10 Datasheet
Download the complete datasheet for Samsung KM416S1120DT-G10 to view detailed technical specifications.
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