This 44-pin commercial temperature EDO DRAM IC operates at a supply voltage of 3.3V, with a maximum supply voltage of 3.6V and a minimum supply voltage of 3V. The device has a maximum supply current of 0.11A and a maximum standby current of 0.001A. It features an access time of 60ns and a memory capacity of 1M x 64 bits. The IC is packaged in a TSOP2-R package with a width of 10.16mm and a length of 20.95mm.
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Technical Specifications
Samsung KM416V1004AR-6 technical specifications.
General
| Max Operating Temperature | 70 |
| Number of Terminals | 44 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G44 |
| Width | 10.16 |
| Length | 20.95 |
| Pin Count | 44 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Supply Voltage-Max (Vsup) | 3.6 |
| Supply Voltage-Min (Vsup) | 3 |
| Supply Current-Max | 0.11 |
| Number of Words | 1048576 |
| Number of Words Code | 1000000 |
| Memory IC Type | EDO DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.001 |
| Access Time-Max | 60 |
| I/O Type | COMMON |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8542.32.00.02 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Samsung KM416V1004AR-6 Datasheet
Download the complete datasheet for Samsung KM416V1004AR-6 to view detailed technical specifications.
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