DDR DRAM Module, 64MX64, 0.75ns, CMOS, SODIMM-200
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Technical Specifications
Samsung M470L6524BT0-CB0 technical specifications.
General
| Max Operating Temperature | 70 |
| Number of Terminals | 200 |
| Min Operating Temperature | 0 |
| Terminal Position | ZIG-ZAG |
| JEDEC Package Code | R-XZMA-N200 |
| Pin Count | 200 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 2.5 |
| Supply Voltage-Max (Vsup) | 2.7 |
| Supply Voltage-Min (Vsup) | 2.3 |
| Supply Current-Max | 1.64 |
| Number of Words | 67108864 |
| Number of Words Code | 64000000 |
| Memory IC Type | DDR DRAM MODULE |
| Number of Ports | 1 |
| Standby Current-Max | 0.04 |
| Access Time-Max | 0.75 |
| Clock Frequency-Max (fCLK) | 133 |
| I/O Type | COMMON |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8542.32.00.36 |
| REACH | unknown |
| Military Spec | False |
Datasheet
No datasheet is available for this part.