This 1.8V DDR DRAM module features a maximum operating temperature of 85 degrees Celsius and a minimum operating temperature of 0 degrees Celsius. It has a supply voltage range of 1.7 to 1.9 volts and a maximum supply current of 1.856 amps. The module has a maximum clock frequency of 400 MHz and a maximum access time of 0.4 ns. It is designed for use in a single port configuration and has a standby current of up to 0.16 amps.
Samsung M470T5663EH3-CF7 technical specifications.
| Max Operating Temperature | 85 |
| Number of Terminals | 200 |
| Min Operating Temperature | 0 |
| Terminal Position | ZIG-ZAG |
| JEDEC Package Code | R-XZMA-N200 |
| Width | 3.8 |
| Length | 67.6 |
| Pin Count | 200 |
| Number of Functions | 1 |
| Temperature Grade | OTHER |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Supply Current-Max | 1.856 |
| Number of Words | 268435456 |
| Number of Words Code | 256000000 |
| Memory IC Type | DDR DRAM MODULE |
| Number of Ports | 1 |
| Standby Current-Max | 0.16 |
| Access Time-Max | 0.4 |
| Clock Frequency-Max (fCLK) | 400 |
| I/O Type | COMMON |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8542.32.00.36 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
