PNP epitaxial silicon switching transistor in the SOT-23 package. It is rated for 40 V collector-base and collector-emitter voltage, 5 V emitter-base voltage, and 600 mA collector current. The device has 350 mW collector dissipation at 25°C and a storage temperature range to 150°C. Typical small-signal performance includes 200 MHz transition frequency, 8.5 pF collector-base capacitance, and switching times of 35 ns turn-on and 255 ns turn-off under the stated test conditions.
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Samsung MMBT4403 technical specifications.
| Max Operating Temperature | 140 |
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
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