This high-voltage PNP epitaxial silicon transistor is housed in a SOT-23 surface-mount package and uses the 2L top mark. It is intended for low-power amplification and switching applications. Published Samsung databook references place collector-emitter capability at about 150 V with collector current in the 0.5 A to 0.6 A range. The part is obsolete.
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Samsung MMBT5401 technical specifications.
| Max Operating Temperature | 150 |
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Samsung MMBT5401 to view detailed technical specifications.
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