Hex configuration N-channel and P-channel enhancement mode power MOSFETs with a maximum drain-source voltage of 60V. These through-hole mounted components feature a 12-pin single in-line package (SIP) with a tab, offering 10A continuous drain current for N-channel and 6A for P-channel. Key specifications include a maximum gate-source voltage of ±20V and a maximum drain-source resistance of 140mOhm at specified gate voltages. Operating temperature range is from -40°C to 150°C, with a maximum power dissipation of 5000mW.
PackageSIP
MountingThrough Hole
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Technical Specifications
Sanken Electric SLA5061 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
SIP
Package/Case
SIP
Package Description
Single In Line Package
Lead Shape
Through Hole
Pin Count
12
PCB
12
Tab
Tab
Package Length (mm)
31.5(Max)
Package Width (mm)
4.8
Package Height (mm)
16
Seated Plane Height (mm)
18.7
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Hex
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
6
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
10@N Channel|6@P ChannelA
Maximum Drain Source Resistance
140@4V@N Channel|140@10V@P ChannelmOhm
Typical Input Capacitance @ Vds
460@10V@N Channel|1200@10V@P ChannelpF
Maximum Power Dissipation
5000mW
Min Operating Temperature
-40°C
Max Operating Temperature
150°C
Compliance
Cage Code
SDH93
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Sanken Electric SLA5061 Datasheet
Download the complete datasheet for Sanken Electric SLA5061 to view detailed technical specifications.
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