N-channel enhancement mode MOSFET transistor, featuring a 60V drain-source voltage and 7A continuous drain current. This quad-configuration device is housed in a 15-pin Single In Line Package (SIP) with through-hole mounting. Key electrical characteristics include a ±20V gate-source voltage, 2V gate threshold voltage, and 100 mOhm drain-source resistance at 10V. Operating temperature range spans from -40°C to 150°C, with a maximum power dissipation of 4800mW.
PackageSIP
MountingThrough Hole
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Technical Specifications
Sanken Electric SLA5065 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
SIP
Package/Case
SIP
Package Description
Single In Line Package
Lead Shape
Through Hole
Pin Count
15
PCB
15
Tab
Tab
Package Length (mm)
31.3
Package Width (mm)
4.8
Package Height (mm)
16
Seated Plane Height (mm)
22.7
Pin Pitch (mm)
4
Package Material
Plastic
Mounting
Through Hole
Configuration
Quad
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
4
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
7A
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
100@10VmOhm
Typical Input Capacitance @ Vds
660@10VpF
Maximum Power Dissipation
4800mW
Min Operating Temperature
-40°C
Max Operating Temperature
150°C
Compliance
Cage Code
SDH93
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Sanken Electric SLA5065 Datasheet
Download the complete datasheet for Sanken Electric SLA5065 to view detailed technical specifications.
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