Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 83A I(C), 600V V(BR)CES, N-Channel, TO-3PL, 3 PIN

FUJI ELECTRIC 1MBI1200U4C-170 IGBT Array & Module Transistor, Dual N Channel, 1.6 kA, 2.43 V, 7.35 kW, 1.7 kV, Module
FUJI ELECTRIC 1MBI3600U4D-170 IGBT Array & Module Transistor, N Channel, 4.8 kA, 2.57 V, 18.65 kW, 1.7 kV, Module
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
Insulated Gate Bipolar Transistor, 9A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
Insulated Gate Bipolar Transistor, 12A I(C), 1400V V(BR)CES, N-Channel, TO-3PF, 3 PIN
Insulated Gate Bipolar Transistor, 26A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN
Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-3PL, 3 PIN