Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Inductor RF Unshielded Wirewound 0.82uH 10% 25MHz 30Q-Factor Iron 0.354A 1.6Ohm DCR 1812 T/R