Insulated Gate Bipolar Transistor, 100A I(C), 1400V V(BR)CES, N-Channel, M232, 7 PIN
Insulated Gate Bipolar Transistor, 75A I(C), 1400V V(BR)CES, N-Channel, M232, 7 PIN
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M218, MODULE-7
FUJI ELECTRIC 2MBI200U4H-120-50 IGBT Array & Module Transistor, N Channel, 200 A, 2.05 V, 1.04 kW, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M218, 7 PIN
Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-19
Insulated Gate Bipolar Transistor, 400A I(C), 1400V V(BR)CES, N-Channel, M238, 7 PIN
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M238, 7 PIN
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M215, 7 PIN
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, M215, 7 PIN