
TRANSISTOR,PNP,3.5A,400V,TO3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:325V; Power Dissipation Pd:100W; DC Collector Current:3.5A; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:TO-3; No. of Pins:2; DC Current Gain hFE:30; Gain Bandwidth ft Typ:2.8MHz
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Silicon Controlled Rectifier, 16A I(T)RMS, 8000mA I(T), 400V V(DRM), 200V V(RRM), 1 Element, TO-3, TO-3, 2 PIN
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
Small Signal Bipolar Transistor, 3A I(C), 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-105,
Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-72, TO-72, 4 PIN