
FUJI ELECTRIC 7MBR30SA-060-50 IGBT Array & Module Transistor, 7 Pack, N Channel, 30 A, 1.8 V, 120 W, 600 V, Module
Silicon Controlled Rectifier, 78.5A I(T)RMS, 800V V(DRM), 600V V(RRM), 1 Element, MODULE-26
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
Silicon Controlled Rectifier, 117.75A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, MODULE-38