Silicon Controlled Rectifier, 47.1A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, MODULE-26
FUJI ELECTRIC 7MBP25RA-120-55 IGBT Array & Module Transistor, N Channel, 25 A, 2.6 V, 198 W, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MODULE-24