Power Field-Effect Transistor, 89A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN
Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3
Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4
IGBT 1200V 75A 347W SOT227
IGBT have ultra low VCE(ON) and are ideal for low frequency applications
Power Field-Effect Transistor, 67A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Trans MOSFET N-CH 500V 77A 3-Pin(3+Tab) TO-264 MAX
Trans IGBT Chip N-CH 1.2KV 135A 3-Pin(3+Tab) TO-264
Trans MOSFET N-CH 500V 56A 3-Pin(3+Tab) TO-264
Trans MOSFET N-CH 500V 56A 3-Pin(3+Tab) T-MAX
Diode Switching 600V 50A 3-Pin(3+Tab) TO-247
Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3
Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN
Power Field-Effect Transistor, 58A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-247, 3 PIN
Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TMAX-3
MOSFET N-CH 500V 57A T-MAX
Power Field-Effect Transistor, 67A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, B2, TMAX-3
