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1200 V, 21 mΩ, Silicon Carbide (SiC) MOSFET

TO-247-4

Active

Drain-Source Voltage (Vds): 1200V

Continuous Drain Current (Id) at 25°C: 100A

Drain-Source On-Resistance (Rds(on)) at 25°C: 21mΩ

Max Operating Junction Temperature (Tjmax): 175°C

Silicon Carbide Power MOSFET 1200V 21mΩ N-Channel TO-247-3

TO-247-3

Active

Drain-Source Voltage (Vdss): 1200V

Drain-Source On-Resistance (Rds on) at 25°C: 21mΩ

Continuous Drain Current (Id) at 25°C: 81A

Maximum Junction Temperature (Tjmax): 175°C

Silicon Carbide Power MOSFET 1200V 21mΩ N-Channel TO-247-3

TO-247-3

Active

Drain-Source Voltage (Vdss): 1200V

Drain-Source On-Resistance (Rds on) at 25°C: 21mΩ

Continuous Drain Current (Id) at 25°C: 81A

Maximum Junction Temperature (Tjmax): 175°C

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