RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
Internally Matched Power GaAs FET
FET, P Channel, ID 4.2 A
FET, P Channel, ID 9 A
X, Ku-Band Internally Matched FET
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN
FET, P Channel, ID 5.2 A
FET, P Channel, ID 5.9 A
FET, P Channel, ID 2.1 A
FET, P Channel, ID 10 A
