Small Signal Field-Effect Transistor, P-Channel, Junction FET
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Zener Diode, 13V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 28V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,
Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon,
Wide Band Medium Power Amplifier, 17500MHz Min, 20000MHz Max, 3.57 X 2.76 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Variable Capacitance Diode, 12pF C(T), 30V, Silicon, Abrupt,
Zener Diode, 6.2V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Wide Band Medium Power Amplifier, 17700MHz Min, 27000MHz Max, 3.67 X 1.25 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE
Wide Band Medium Power Amplifier, 12750MHz Min, 15400MHz Max, 3.435 X 2.77 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE
Variable Capacitance Diode, 15pF C(T), 30V, Silicon, Abrupt,
Power Field-Effect Transistor, 12A I(D), 600V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5
Power Field-Effect Transistor, 13A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4-PAC-5
Variable Capacitance Diode, 8.2pF C(T), 30V, Silicon, Abrupt,
Zener Diode, 11V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 6.8V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 25V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
