Rectifier Diode, 1 Element, 0.075A, Silicon, SOT-23, 3 PIN
TRANSISTOR,JFET,N-CHANNEL,20A I(DSS),SOT-23
Small Signal Field-Effect Transistor, P-Channel, Junction FET
Zener Diode, 13V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 28V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Wide Band Medium Power Amplifier, 17500MHz Min, 20000MHz Max, 3.57 X 2.76 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE
Variable Capacitance Diode, 12pF C(T), 30V, Silicon, Abrupt,
Wide Band Medium Power Amplifier, 17700MHz Min, 27000MHz Max, 3.67 X 1.25 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE
Wide Band Medium Power Amplifier, 12750MHz Min, 15400MHz Max, 3.435 X 2.77 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE
Variable Capacitance Diode, 15pF C(T), 30V, Silicon, Abrupt,
Power Field-Effect Transistor, 12A I(D), 600V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5
Power Field-Effect Transistor, 13A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4-PAC-5
Variable Capacitance Diode, 8.2pF C(T), 30V, Silicon, Abrupt,
Zener Diode, 11V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 6.8V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 25V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 10V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Wide Band Low Power Amplifier, 36000MHz Min, 40000MHz Max, 1.46 X 1.06 MM, 0.11 MM HEIGHT, HERMETIC SEALED, DIE
Wide Band Medium Power Amplifier, 17500MHz Min, 31500MHz Max, 2.61 X 1.41 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE
Zener Diode, 5.6V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
