ABM8 Series 3.2x2.5 mm 27MHZ R50 -40°C ~ +85°C ± 50 ppm Crystal
Enclosures, Boxes, & Cases INNER PANEL
Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Mounting Hardware FEET
15.2m Straight ESD Static Grounding Clamp, 40mm Jaw Opening
Power Field-Effect Transistor, 16A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Inductor Power Shielded Drum Core 0.44uH/0.5uH 30% 100KHz Ferrite 1.54A 0.042Ohm DCR 1212 T/R
