Search Results for &quot; IRHNJ9A7130B &quot;

Trans MOSFET P-CH 200V 8A 3-Pin SMD-0.5

Volume Production

Continuous Drain Current (ID): 8A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ598130

Power Field-Effect Transistor, 12.5A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Pin Count: 3

IRHNJ7330SE

Power Field-Effect Transistor, 5A I(D), 400V, 1.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ593230

Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 8A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ598230

Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Pin Count: 3

IRHNJ597Z30

Power Field-Effect Transistor, 22A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 22A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ8130SCV

Trans MOSFET N-CH 100V 14.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ4230SCS

Trans MOSFET N-CH 200V 9.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ3130SCV

Trans MOSFET N-CH 100V 14.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ4230SCV

Trans MOSFET N-CH 200V 9.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, 10A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ4130SCV

Trans MOSFET N-CH 100V 14.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ3130SCS

Trans MOSFET N-CH 100V 14.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ8230SCS

Trans MOSFET N-CH 200V 9.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ7230SCS

Trans MOSFET N-CH 200V 9.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ57230SE

Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ3230SCS

Trans MOSFET N-CH 200V 9.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ7130SCS

Trans MOSFET N-CH 100V 14.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ57133SE

Power Field-Effect Transistor, 20A I(D), 130V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 20A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, 10A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 10A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ597230

Trans MOSFET P-CH 200V 8A 3-Pin SMD-0.5

Volume Production

Continuous Drain Current (ID): 8A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ598130

Power Field-Effect Transistor, 12.5A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Pin Count: 3

IRHNJ7330SE

Power Field-Effect Transistor, 5A I(D), 400V, 1.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ593230

Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 8A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ598230

Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Pin Count: 3

IRHNJ597Z30

Power Field-Effect Transistor, 22A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 22A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ8130SCV

Trans MOSFET N-CH 100V 14.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ4230SCS

Trans MOSFET N-CH 200V 9.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ3130SCV

Trans MOSFET N-CH 100V 14.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ4230SCV

Trans MOSFET N-CH 200V 9.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, 10A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ4130SCV

Trans MOSFET N-CH 100V 14.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ3130SCS

Trans MOSFET N-CH 100V 14.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ8230SCS

Trans MOSFET N-CH 200V 9.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ7230SCS

Trans MOSFET N-CH 200V 9.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ57230SE

Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ3230SCS

Trans MOSFET N-CH 200V 9.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ7130SCS

Trans MOSFET N-CH 100V 14.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ57133SE

Power Field-Effect Transistor, 20A I(D), 130V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 20A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, 10A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN