Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
N CHANNEL MOSFET, 30V, 54A TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. of Pins:3 ;RoHS Compliant: No