Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFRARED THERMOMETER, -20 C TO 320 C; Temperature Measuring Range:-20 C to +320 C; Accuracy %:2%; Operating Temperature Min:0 C; Operating Temperature Max:50 C; Product Range:-; Signal Input Type:Temperature ;RoHS Compliant: Yes
Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Half Bridge Based MOSFET Driver, 3A, CMOS, PDIP14, PLASTIC, MS-001AC, DIP-14