Search Results for &quot; IXGR32N60C &quot;

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Voltage (VCEO): 600V

Collector-emitter Voltage-Max: 2.7V

Input Type: STANDARD

IXGR32N60CD1

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 2.1V

Collector Emitter Voltage (VCEO): 600V

Collector-emitter Voltage-Max: 2.7V

Search Results for "IXGR32N60C"

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IXGR32N60C

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Voltage (VCEO): 600V

Collector-emitter Voltage-Max: 2.7V

Input Type: STANDARD

IXGR32N60CD1

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 2.1V

Collector Emitter Voltage (VCEO): 600V

Collector-emitter Voltage-Max: 2.7V