RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-11, 4 PIN
Trans MOSFET N-CH 65V 4.5A
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 744A-01, 8 PIN
RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF FET, 1-Element, 4-Pin Radial, Silicon N-Channel
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 316-01, 6 PIN
Trans RF MOSFET N-CH 65V 9A 4-Pin Case 316-01
Trans RF MOSFET N-CH 65V 13A 4-Pin Case 333-04
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 368-03, HOGPAC-2
FUSE 1A 250V FAST SHORT MRF
Electric Fuse, Fast Blow, 1.6A, 250VAC, 50A (IR), Through Hole, MICRO, ROHS COMPLIANT
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN
Conn Circular F 12 POS Solder ST Thru-Hole 12 Terminal 1 Port
FUSE 1.25A 250V FAST SHORT MRF
