Search Results for "MSM5117400F-60J3FAR1"

Inductor RF Molded/Unshielded Wirewound 47uH 5% 2.5MHz 55Q-Factor Iron 193mA 2.75Ohm DCR AXL T/R

Inductor RF Molded/Unshielded Wirewound 33uH 5% 2.5MHz 45Q-Factor Ferrite 95mA 5.2Ohm DCR AXL T/R

Inductor RF Molded/Unshielded Wirewound 47uH 5% 2.5MHz 45Q-Factor Ferrite 110mA 4.5Ohm DCR AXL T/R

Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50

PTC Resettable Fuse, Surface Mount, CHIP, 1913, HALOGEN FREE AND ROHS COMPLIANT

PTC Resettable Fuse, 2-Term, SMD, 4.73x3.41x1.1mm

Inductor RF Unshielded Wirewound 47uH 5% 2.5MHz 35Q-Factor Ferrite 0.11A 4.5Ohm DCR 3013 T/R

Inductor RF Molded/Unshielded Wirewound 4700uH 5% 250KHz 80Q-Factor Iron 0.059A 48Ohm DCR AXL T/R

Inductor RF Molded/Unshielded Wirewound 47uH 5% 2.5MHz 55Q-Factor Iron 0.193A 2.75Ohm DCR AXL T/R

Inductor RF Molded/Unshielded Wirewound 33uH 5% 2.5MHz 45Q-Factor Ferrite 95mA 5.2Ohm DCR AXL T/R

Inductor RF Molded/Unshielded Wirewound 47uH 5% 2.5MHz 45Q-Factor Ferrite 110mA 4.5Ohm DCR AXL T/R

Inductor RF Shielded/Molded Wirewound 47uH 5% 2.5MHz 55Q-Factor Iron 170mA 2.75Ohm DCR 0.01% AXL T/R

Inductor RF Shielded/Molded Wirewound 47uH 5% 2.5MHz 55Q-Factor Iron 170mA 2.75Ohm DCR 1% AXL T/R

Inductor RF Shielded/Molded Wirewound 47uH 5% 2.5MHz 55Q-Factor Iron 170mA 2.75Ohm DCR 0.1% AXL T/R

Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, SOJ-20

Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

Trans Voltage Suppressor Diode, 100W, 24V V(RWM), Unidirectional, 5 Element, Silicon, PLASTIC PACKAGE-5

Trans Voltage Suppressor Diode, 100W, 15V V(RWM), Unidirectional, 5 Element, Silicon, PLASTIC PACKAGE-5

Trans Voltage Suppressor Diode, 100W, 12V V(RWM), Unidirectional, 5 Element, Silicon, PLASTIC PACKAGE-5

EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, SOJ-24