0805 Unshielded Wirewound Inductor 0.5uH 2% 50MHz 20Q 0.2A
Inductor RF Chip Unshielded Wirewound 0.5uH 5% 50MHz 20Q-Factor Ceramic 0.2A 3.2Ohm DCR 0805 T/R
Splitter, 0MHz Min, 10000MHz Max, ROHS COMPLIANT PACKAGE-3
DIODE GEN PURP 1.2KV 125A DO205
Rectifier Diode, 1 Phase, 1 Element, 175A, 200V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 100A, 600V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 100A, 1200V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 175A, 800V V(RRM), Silicon, DO-8,
DIODE GEN PURP 1.4KV 100A DO205
Rectifier Diode, 1 Phase, 1 Element, 100A, 200V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 125A, 1400V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 100A, 1200V V(RRM), Silicon,
Rectifier Diode, 1 Phase, 1 Element, 175A, 400V V(RRM), Silicon, DO-8,
RF Splitter, 0-15GHz, -40 to 125°C
ABL Series 22.1184 MHz ±30 ppm 20 pF -40 to 85 °C Microprocessor Crystal
ABM3B Series 25 MHz ±50 ppm 18 pF -40 to +85 °C Surface Mount Ceramic Crystal
Inductor Power Shielded Wirewound 0.5uH 30% 100KHz Ferrite 5.2A 0.009Ohm DCR 2424 T/R
ABL Series 22.1184 MHz ±5 ppm 20 pF -40 to +85 °C Microprocessor Crystal
