Inductor Power Shielded Wirewound 0.6uH 20% 100KHz 42A 0.0011Ohm DCR RDL Tray
Power Field-Effect Transistor,
Power Field-Effect Transistor, 76A I(D), 600V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
Power Field-Effect Transistor, 46A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
Audio ICs, ELECTRONIC VOLUME CONTROL WITH BUILT-IN SPEATEN FILTER
Inductor Power Shielded Wirewound 0.6uH 20% 100KHz Metal 11A 0.00781Ohm DCR T/R
Conn SIM Card M 8 POS 2.54mm Solder ST SMD T/R
CRYSTAL 24.0000MHZ 18PF SMD
Rectifier Diode, 1 Phase, 1 Element, 300A, 2200V V(RRM), Silicon, DO-9,
Rectifier Diode, 1 Phase, 1 Element, 250A, 1800V V(RRM), Silicon, DO-9,
DIODE GEN PURP 1.2KV 250A DO205
Rectifier Diode, 1 Phase, 1 Element, 350A, 1400V V(RRM), Silicon, DO-9, R60, 1 PIN
DIODE GEN PURP 400V 220A DO205AB
Rectifier Diode, 1 Phase, 1 Element, 350A, 1200V V(RRM), Silicon, DO-9, R60, 1 PIN
DIODE GEN PURP 1KV 250A DO205
DIODE GEN PURP 1.4KV 300A DO205
DIODE GEN PURP 1.2KV 300A DO205
