ABL Series 4 MHz ±50 ppm 20 pF -40 to +85 °C Microprocessor Crystal
Rectifier Diode, 1 Phase, 1 Element, 100A, 400V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 175A, 600V V(RRM), Silicon, DO-8,
DIODE GEN PURP 1.6KV 125A DO205
S1812 Series 100 uH 10% 169 mA Shielded SMT Inductor
Inductor RF Chip Unshielded Wirewound 0.5uH 5% 50MHz 20Q-Factor Ceramic 0.2A 3.2Ohm DCR 0805 T/R
Inductor RF Chip Unshielded Wirewound 0.5uH 2% 50MHz 20Q-Factor Ceramic 0.2A 3.2Ohm DCR 0805 T/R
Board to Board & Mezzanine Connectors 24P PLG B2B .4mm PCH 1.0mm HEIGHT
Rectifier Diode, 1 Phase, 1 Element, 100A, 600V V(RRM), Silicon,
P1812R Series 100 uH 10% 180 mA Non-Shielded SMT Power Inductor
Rectifier Diode, 1 Phase, 1 Element, 125A, 600V V(RRM), Silicon, DO-8,
DIODE GEN PURP 1.4KV 150A DO205
S1210R Series 1.8 uH 10 % 328 mA Shielded SMT Inductor
Rectifier Diode, 1 Phase, 1 Element, 100A, 1000V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 100A, 1200V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 175A, 1200V V(RRM), Silicon, DO-8,
DIODE GEN PURP 1.2KV 150A DO205
SPD125 Series 330 uH 700 mA 20 % Shielded SMT Inductor
