1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, SOT-223 (TO-261) 4 LEAD, 1000-REEL
Power Choke Wirewound 4.7uH 20% 10KHz 4.1A 0.03Ohm DCR RDL T/R
Power Choke Wirewound 4.7uH 20% 10KHz 3.3A 0.04Ohm DCR RDL T/R
Power Choke Wirewound 6.8uH 20% 10KHz 3.3A 0.05Ohm DCR RDL T/R
Power Choke Wirewound 33uH 20% 10KHz 2.1A 0.09Ohm DCR RDL T/R
Power Choke Wirewound 68uH 10% 10KHz 1.7A 0.16Ohm DCR RDL T/R
Power Choke Wirewound 1.5uH 30% 10KHz 4.2A 0.02Ohm DCR RDL T/R
Power Choke Wirewound 1000uH 10% 10KHz 0.25A 2.82Ohm DCR RDL T/R
Power Choke Wirewound 1.5uH 30% 10KHz 4.5A 0.02Ohm DCR RDL T/R
General Purpose Inductor, 330uH, 10%, Ferrite-Core,
General Purpose Inductor, 10uH, 20%, Ferrite-Core,
GENERAL PURPOSE INDUCTOR,
Power Choke Wirewound 68uH 10% 10KHz 1.7A 0.11Ohm DCR RDL Bulk
Power Choke Wirewound 1500uH 10% 10KHz 0.47A 1.52Ohm DCR RDL Bulk
Power Choke Wirewound 2.2uH 30% 10KHz 4.35A 0.02Ohm DCR RDL Bulk
Power Choke Wirewound 33uH 20% 10KHz 2.4A 0.07Ohm DCR RDL Bulk
Power Choke Wirewound 2.2uH 30% 10KHz 4A 0.03Ohm DCR RDL T/R
