Search Results for "SCTH2010-R56"

Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz 12A 0.0093Ohm DCR 1616 Automotive T/R

Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz 13.9A 0.00954Ohm DCR Automotive T/R

Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz 17.7A 0.00452Ohm DCR Automotive T/R

Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz 12A 0.0093Ohm DCR 1616 Automotive T/R

General Purpose Inductor,

Inductor Power Molded Wirewound 0.56uH 20% 17A 0.005Ohm DCR T/R

SMD Shielded Power Inductor

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package

Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package

Inductor Power Shielded Wirewound 0.56uH 20% 300KHz Metal 23A 0.0017Ohm DCR 4040 T/R

Trans MOSFET N-CH Si 20V 5A 8-Pin TSSOP T/R

Inductor Power Shielded Wirewound 0.56uH 20% 100KHz Ferrite 12A 0.0025Ohm DCR T/R

Inductor Power Shielded Wirewound 0.56uH 20% 100KHz 12A 0.0025Ohm DCR T/R

Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz Carbonyl Powder 18.8A 0.005Ohm DCR 2525 T/R

Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz Metal 10A 0.01Ohm DCR 2020 T/R

Inductor Power Shielded/Molded Wirewound 0.56uH 20% 100KHz Metal 8.1A 0.016Ohm DCR T/R

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package

Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package

Cap Film 0.47uF 600V 10% (45 X 22 X 33mm) Screw Mount 0.012 Ohm

Cap Film 1.5uF 600V 10% (45 X 22 X 33mm) Screw Mount 0.007 Ohm