Semikron SEMiX453GB12E4s, GB Series IGBT Module, 683 A max, 1200 V, Screw Mount
Insulated Gate Bipolar Transistor, 350A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 3, 11 PIN
IGBT MODULE, 1.2KV, 646A, SEMIX 3; Transistor Polarity:Dual N Channel; DC Collector Current:650A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:11 ;RoHS Compliant: Yes
IGBT MODULE, 1.2KV, 480A, SEMIX 3; Transistor Polarity:N Channel; DC Collector Current:490A; Collector Emitter Saturation Voltage Vce(on):2.15V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:20 ;RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 270A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN
IGBT; 1200 V, 250 A @ 25 DegC; 260 A @ 80 DegC; 1.7 V @ 25 degC
IGBT HALFBRIDGE ULTRAFAST, 1200V, SEMITRANS
IGBT MODULE, 1.2KV, 642A, SEMIX 33C
Insulated Gate Bipolar Transistor, 435A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN
Insulated Gate Bipolar Transistor, 320A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN
Insulated Gate Bipolar Transistor, 260A I(C), 1700V V(BR)CES, N-Channel, SEMIX 2S, 15 PIN
IGBT; 1200 V, 700 A @ 25 DegC; 700 A @ 80 DegC; 1.7 V @ 25 degC
SEMIKRON SEMIX503GB126HDS IGBT Array & Module Transistor, Dual NPN, 480 A, 1.7 V, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN
Insulated Gate Bipolar Transistor, 775A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 4S, 22 PIN
Trans IGBT Module N-CH 1200V 364A 18-Pin
Trans IGBT Module N-CH 1200V 533A 14-Pin
Insulated Gate Bipolar Transistor, 444A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 3S, 20 PIN
