Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, 2.29 X 2.29 MM, DIE-2
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, 9.73 X 10.23 MM, DIE-10
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, 2.60 X 2.60 MM, DIE-2
Insulated Gate Bipolar Transistor, 2A I(C), 600V V(BR)CES, N-Channel, 1.78 X 1.78 MM, DIE-2
Power Choke Shielded Wirewound 4.7uH 20% 1MHz 0.86A 0.336Ohm DCR 0806 T/R
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, 8.99 X 8.99 MM. DIE-10
FILTER UNIT, 80MM - More Details
Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, DIE
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, 10.47 X 10.44 MM, DIE
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, DIE
