Search Results for "SIG"

Rectifier Diode, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon,

LIMIT SWITCH SZL-WL

Rectifier Diode, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon,

Datalogging & Acquisition NI LABVIEW TEK ED. FULL VERSION SFWR

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE-3

Inductor Power Shielded Wirewound 3.3uH 20% 100KHz 1.7A 120mOhm DCR 1212 Embossed Carrier T/R

Inductor Power Shielded Wirewound 1.5uH 30% 100KHz 3.6A 20mOhm DCR T/R

Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, 2.86 X 2.82 MM, DIE-2

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 3.92 X 3.88 MM, DIE-2

Inductor Power Shielded Wirewound 47uH 20% 100KHz 0.45A 1.02Ohm DCR 1515 T/R

Poster; Warning; Black on Yellow; English; 17 x 22 In.; 5 per Box

Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, DIE-3

Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, 2.60 X 2.60 MM, DIE-2

Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, 4.04 X 4.00, DIE-2

FILTER UNIT, 80MM - More Details

Power Choke Shielded Wirewound 1uH 20% 1MHz 1.62A 0.088Ohm DCR 1008 T/R

Power Choke Shielded Wirewound 6.8uH 20% 1MHz 0.6A 0.612Ohm DCR 1008 T/R

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.5 X 3.5 MM, DIE-2

Power Choke Shielded Wirewound 1uH 20% 1MHz 1.53A 0.085Ohm DCR 1008 T/R

Power Choke Shielded Wirewound 2.2uH 20% 1MHz 1.17A 0.155Ohm DCR 1008 T/R