Insulated Gate Bipolar Transistor, 73A I(C), 1200V V(BR)CES
Trans IGBT Module N-CH 1200V 890A 4-Pin
SEMIKRON SKM22GD123D IGBT Array & Module Transistor, N Channel, 22 A, 3 V, 145 W, 1.2 kV, SEMITRANS 6
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, CASE D 61, SEMITRANS 2, 7 PIN
Trans IGBT Module N-CH 1200V 235A 7-Pin
Insulated Gate Bipolar Transistor, 830A I(C), 1700V V(BR)CES, N-Channel, CASE D 59, SEMITRANS 4, 4 PIN
Semikron SKM150GB123D, D 56 Series IGBT Module, 150 A max, 1200 V, Screw Mount
Insulated Gate Bipolar Transistor, 760A I(C), 1200V V(BR)CES, N-Channel, CASE D 59, SEMITRANS 4, 4 PIN
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
Insulated Gate Bipolar Transistor, 700A I(C), 1200V V(BR)CES, N-Channel, CASE D 59, SEMITRANS 4, 4 PIN
Insulated Gate Bipolar Transistor, 910A I(C), 1200V V(BR)CES, N-Channel, CASE D59, SEMITRANS 4, 5 PIN
IGBT module SEMITRANS 2 1200 V, SKM195GB126D, Semikron
Insulated Gate Bipolar Transistor, 422A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
IGBT MODULE, 600V, 100A, SEMITRANS 2; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:5 ;RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 314A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, CASE D59, SEMITRANS 4, 5 PIN
Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, CASE D 59, SEMITRANS 4, 5 PIN
Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
