Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
Transistor,
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
Trans IGBT Module N-CH 1200V 470A 5-Pin Case D-57
IGBT MODULE, 600V, 130A, SEMITRANS 2
Insulated Gate Bipolar Transistor, 660A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 310A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 220A I(C), 1700V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 310A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, CASE D 59, SEMITRANS 4, 4 PIN
IGBT MODULE, 1.7KV, 110A, SEMITRANS 2; Transistor Polarity:N Channel; DC Collector Current:110A; Collector Emitter Saturation Voltage Vce(on):1.7kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; No. of Pins:7 ;RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
Insulated Gate Bipolar Transistor,
Insulated Gate Bipolar Transistor, 570A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 960A I(C), 1200V V(BR)CES, N-Channel, CASE D 59, SEMITRANS 4, 5 PIN
Insulated Gate Bipolar Transistor
Trans IGBT Module N-CH 1.2KV 400A 5-Pin Case D-57
Insulated Gate Bipolar Transistor, 618A I(C), 1200V V(BR)CES, N-Channel, CASE D56, 7 PIN
IGBT MODULE, 1.2KV, 190A, SEMITRANS 2; Transistor Polarity:N Channel; DC Collector Current:190A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes
