The JAN2N2907A is a hermetically sealed, metal can-3 packaged PNP transistor with a maximum collector current of 600mA and a maximum operating temperature of 200°C. It has a collector base voltage of 60V and a power dissipation of 500mW. The transistor is mounted through a hole and has a TO-18 package case. It is not radiation hardened and is not RoHS compliant.
PackageTO-18
MountingThrough Hole
PolarityPNP
Power500mW
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Technical Specifications
Semicoa JAN2N2907A technical specifications.
General
| Package/Case | TO-18 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Semicoa JAN2N2907A Datasheet
Download the complete datasheet for Semicoa JAN2N2907A to view detailed technical specifications.
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