Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon,
Semicoa JANS2N3501UB technical specifications.
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Voltage (VCEO) | 150V |
| Emitter Base Voltage (VEBO) | 6V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
