Semicoa
JANTXV2N2857UB
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3
MountingSurface Mount
PolarityNPN
Power200mW
Quick Jump:
Technical Specifications
Semicoa JANTXV2N2857UB technical specifications.
General
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Voltage (VCEO) | 15V |
| Emitter Base Voltage (VEBO) | 3V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Semicoa JANTXV2N2857UB Datasheet
Download the complete datasheet for Semicoa JANTXV2N2857UB to view detailed technical specifications.
No datasheet is available for this part.